# MOSFET – Single, P-Channel, POWERTRENCH, Logic Level

### General Description
This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process. It has been optimized for battery power management applications.

### Features
- Max R₍ₘₐₓ₎ Rₓ = 50 mΩ @ V₍₍Gₛ₎=-10 V, I₍₍D₎=-4 A
- Max R₍ₘₐₓ₎ Rₜ₁₆₈₉ₓ = 75 mΩ @ V₍₍Gₛ₎ = −4.5 V, I₍₍D₎ = −3.4 A
- Low Gate Charge
- High Performance Trench Technology for Extremely Low R₍ₘₐₓ₎ Rₜₗₐ₄ₚ
- Pb−Free, Halide Free and RoHS Compliant

### Applications
- Battery Management
- Load Switch
- Battery Protection
- DC−DC Conversion

### ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted.

| Symbol | Parameter | Ratings | Unit |
| --- | --- | --- | --- |
| V₍₍Dₛ₎ | Drain-Source Voltage | -30 | V |
| V₍₍Gₛ₎ | Gate-Source Voltage | ±25 | V |
| I₍₍D₎ | Drain Current - Continuous | -4 | A |
|  | - Pulsed | -20 |  |
| P₍₍D₎ | Maximum Power Dissipation | 1.6 | W |
|  |  | 0.8 |  |
| T₍₍J₎, T₍₍Sₜ₎ | Operating and Storage Junction Temperature Range | -55 to +150 | °C |

### THERMAL CHARACTERISTICS
TSOT23 CASE 419BL

### MARKING DIAGRAM
| Device | Package | Shipping |
| --- | --- | --- |
| FDC658AP | TSOT23(Pb-Free/Halide Free) | 3000/Tape&Reel |
| FDC658AP-G | TSOT23(Pb-Free/Halide Free) | 3000/Tape&Reel |

### ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise noted.

| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- | --- |
| **OFF CHARACTERISTICS** |  |  |  |  |  |  |
| BV₍₍Dₛₛ₎ | Drain-Source Breakdown Voltage | I₍₍D₎=−250μA, V₍₍Gₛ₎=0V | -30 | - | - | V |
| ΔBV₍₍Dₛₛ₎/ΔT₍₍J₎ | Breakdown Voltage Temperature Coefficient | I₍₍D₎=−250μA, Referenced to 25℃ | - | -22 | - | mV/℃ |
| I₍₍D₎ₛₛ | Zero Gate Voltage Drain Current | V₍₍Gₛ₎=0V,V₍₍Dₛ₎=-24V | - | - | -1 | μA |
| I₍₍G₎ₛₛ | Gate-Body Leakage | V₍₍Gₛ₎=±25V,V₍₍Dₛ₎=0V | - | - | ±100 | nA |

### ON CHARACTERISTICS (Note 2)
| V₍₍Gₛ(th)₎ | Gate Threshold Voltage | V₍₍Dₛ₎=V₍₍Gₛ₎,I₍₍D₎=−250μA | -1 | -1.8 | -3 | V |
| ΔV₍₍Gₛ(th)₎/ΔT₍₍J₎ | Gate Threshold Voltage Temperature Coefficient | I₍₍D₎=−250μA,Referenced to 25℃ | - | 4 | - | mV/℃ |
| R₍ₘₐₓ₎ₙₙₗₘₑ₍: 100 | Disabled Dynamic Characteristic | - |  |  |  |  |
| Qg | Total Gate Charge | V₍₍Dₛ₎=-15 V, I₍₍D₎=-4 A, V₍₍Gₛ₎=-5 V | - | 6 | 8.1 | nC |

### SWITCHING CHARACTERISTICS (Note 2)
| t₍₁ₚₘₑₑₙ | Turn-On Delay Time | V₍₍Dₛ₎=-15 V, I₍₍D₎=-1 A, V₍₍Gₛ₎=-10 V, R₍₍Gene₎=6Ω | - | 7 | 14 | ns |
| t₍₍r₎ | Turn-On Rise Time | - | 12 | 22 | ns |
| t₍₍d₎₍ₕ₎ | Turn-Off Delay Time | - | 16 | 29 | ns |
| t₍₍f₎ | Turn-Off Fall Time | - | 6 | 12 | ns |

### DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
| I₍₍S₎ | Maximum Continuous Drain-Source Diode Forward Current | - | - | - | -1.3 | A |
| V₍₍S₎ₗ | Drain-Source Diode Forward Voltage | V₍₍Gₛ₎=0V，IS=-1.3A(Note 2) | - | -0.77 | -1.2 | V |

### TYPICAL CHARACTERISTICS
#### Figures
- On−Region Characteristics
- Normalized On−Resistance vs.
- Transfer Characteristics
- Source to Drain Diode Forward Voltage

**POWERTRENCH** is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries.