Switch-mode Power Rectifiers

Part Numbers

  • MBR1080G
  • MBR1090G
  • MBR10100G
  • NRVB10100G

Features

  • Guard−Ring for Stress Protection
  • Low Forward Voltage
  • 175°C Operating Junction Temperature
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • Low Power Loss/High Efficiency
  • High Surge Capacity
  • Low Stored Charge Majority Carrier Conduction
  • AEC−Q101 Qualified and PPAP Capable
  • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb−Free*

Mechanical Characteristics

  • Case: Epoxy, Molded
  • Weight: 1.9 Grams (Approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
  • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
  • ESD Rating: Human Body Model = 3B, Machine Model = C

Marking Diagram

Ordering Information

Device Package Shipping
MBR10100G TO-220(Pb-Free) 50 Units/Rail
MBR1080G TO-220(Pb-Free) 50 Units/Rail
MBR1090G TO-220(Pb-Free) 50 Units/Rail
NRVB10100G TO-220(Pb-Free) 50 Units/Rail

Maximum Ratings

Rating Symbol MBR/NRVB Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage $V_{RRM}V_{RWM}V_{R}$ 80 90 100 V
Average Rectified Forward Current (Rated $V_{R}$) $T_{C}=133^{\circ}C$ $I_{F(AV)}$ 10 A
Peak Repetitive Forward Current (Rated $V_{R}$, Square Wave, 20 kHz) $T_{C}=133^{\circ}C$ $I_{FRM}$ 20 A
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) $I_{FSM}$ 150 A
Peak Repetitive Reverse Surge Current (2.0 μs, 1.0 kHz) $I_{RRM}$ 0.5 A
Operating Junction Temperature (Note 1) $T_{J}$ -65 to +175 $^{\circ}C$
Storage Temperature $T_{stg}$ -65 to +175 $^{\circ}C$
Voltage Rate of Change (Rated $V_{R}$) dv/dt 10,000 V/μs

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

  1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R JA.

Thermal Characteristics

Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction-to-Case RθJC 2.0 °C/W
Maximum Thermal Resistance, Junction-to-Ambient RθJA 60 °C/W

Electrical Characteristics

Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2) vF V
Maximum Instantaneous Reverse Current (Note 2) iR 6.0 mA
0.10 mA

Revision History

Revision Description of Changes Date
2 MBR1080G, MBR1090G, NRVB10100G OPN Marked as Discontinued + ... 6/23/2025

Dimensions

DIM INCHES MILLIMETERS
A 0.595-0.620 15.11-15.75
B 0.380-0.405 9.65-10.29
C 0.160-0.190 4.06-4.82
D 0.025-0.039 0.64-1.00
F 0.142-0.161 3.61-4.09
G 0.190-0.210 4.83-5.33
H 0.110-0.130 2.79-3.30
J 0.014-0.025 0.36-0.64
K 0.500-0.562 12.70-14.27
L 0.045-0.060 1.14-1.52
Q 0.100-0.120 2.54-3.04
R 0.080-0.110 2.04-2.79
S 0.045-0.055 1.14-1.39
0.235-0.255 5.97-6.48
0.000-0.050 0.000-1.27