MOSFET – Power, Dual,

N-Channel, SOIC-8

30 V, 7.5 A

Features

  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • Dual SOIC−8 Surface Mount Package Saves Board Space
  • This is a Pb−Free Device

Applications

  • Disk Drives
  • DC−DC Converters
  • Printers
Rating Symbol Value Unit
Drain-to-Source Voltage $V_{DSS}$ 30 V
Gate-to-Source Voltage $V_{GS}$ $\pm 20$ V
Continuous Drain Current $R_{\theta JA}$ (Note 1) $I_D$ 5.5 A
$T_A=70^{\circ}C$ 4.4
Power Dissipation $R_{\theta JA}$ (Note 1) $P_D$ 1.14 W
Continuous Drain Current $R_{\theta JA}$ (Note 2) $I_D$ 4.5 A
$T_A=70^{\circ}C$ 3.5
Power Dissipation $R_{\theta JA}$ (Note 2) $P_D$ 0.68 W
Continuous Drain Current $R_{\theta JA}$ t<10s (Note 1) $I_D$ 7.5 A
$T_A=70^{\circ}C$ 6.0
Power Dissipation $R_{\theta JA}$ t<10s (Note 1) $P_D$ 1.95 W
Pulsed Drain Current $I_{DM}$ 30 A
Operating Junction and Storage Temperature $T_J,T_{STG}$ -55 to+150 $^{\circ}C$
Source Current (Body Diode) $I_S$ 2.0 A
Single Pulse Drain-to-Source Avalanche Energy EAS 28 mJ
Lead Temperature for Soldering Purposes (1/8" from case for 10s) $T_L$ 260 $^{\circ}C$

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

V(BR)DSS RDS(on)Max ID Max
30V 24mΩ@10V 7.5A
36mΩ@4.5V

THERMAL RESISTANCE RATINGS

Rating Symbol Max Unit
Junction-to-Ambient- Steady State (Note 1) RθJA 110 $^{\circ}C/W$
Junction-to-Ambient-t≤10s (Note 1) RθJA 64
Junction-to-FOOT (Drain) RθJF 40
Junction-to-Ambient- Steady State (Note 2) RθJA 183.5

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 30
Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 18
Zero Gate Voltage Drain Current IDSS VGS=0V,VDS=24V TJ=25℃ 1.0
TJ=100℃ 10
Gate-to-Source Leakage Current IGSS VDS=0V,VGS=±20V ±100

ON CHARACTERISTICS (Note 3)

| Gate Threshold Voltage | VGS(TH) | VGS=VDS,ID=250μA | | 1.5 | | 3.0 | V | | Negative Threshold Temperature Coefficient | VGS(TH)/TJ | | | | 6.0 | | mV/℃ | | Drain-to-Source On Resistance | RDS(on) | VGS=10V, ID=6.9A | | 16 | 24 | mΩ | | VGS=4.5V, ID=5.0A | | 26 | 36 | | | | Forward Transconductance | gFS | VDS=1.5V，ID=6.9A | | | 15 | | S |

CHARGES, CAPACITANCES AND GATE RESISTANCE

| Input Capacitance | CISS | VGS=0V,f=1.0MHz,VDS=15V | | 520 | | pF | | Output Capacitance | COSS | | 140 | | | | Reverse Transfer Capacitance | CRSS | | 70 | | | | Total Gate Charge | QG(TOT) | VGS=4.5V,VDS=15V,ID=6.9A | | 4.8 | | nC | | Threshold Gate Charge | QG(TH) | | 1.1 | | | | Gate-to-Source Charge | QGS | | 2.1 | | | | Gate-to-Drain Charge | QGD | | 1.9 | | | | Total Gate Charge | QG(TOT) | VGS=10V,VDS=15V,ID=6.9A | | 9.5 | | nC |

DRAIN−TO−SOURCE CHARACTERISTICS

| Forward Diode Voltage | VSD | VGS=0VID=2.0A | TJ=25℃ | | 0.76 | 1.0 | V | | TJ=125℃ | | 0.58 | | ns | | | | | Reverse Recovery Time | tRR | VGS=0V,dIS/dt=100A/μs,IS=2.0A | | | 12.5 | | | | Charge Time | Ta | | 7.3 | | | | | Discharge Time | Tb | | 5.2 | | | | | Reverse Recovery Time | QRR | | | 6.0 | | nC |

Source Inductance

| LS | TA=25℃ | | 0.66 | | nH | | --- | --- | --- | --- | --- | --- | --- | | Drain Inductance | LD | | 0.20 | | nH | | | Gate Inductance | LG | | 1.50 | | nH | | | Gate Resistance | RG | | 2.0 | 3.0 | $\Omega$ | |

SOLDERING FOOTPRINT

DIM MILLIMETERS INCHES
MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0° 8° 0° 8°
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244