# MOSFET – Power, Dual,
## N-Channel, SOIC-8
### 30 V, 7.5 A

## Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- Dual SOIC−8 Surface Mount Package Saves Board Space
- This is a Pb−Free Device

## Applications
- Disk Drives
- DC−DC Converters
- Printers

| Rating | Symbol | Value | Unit |
| --- | --- | --- | --- |
| Drain-to-Source Voltage | $V_{DSS}$ | 30 | V |
| Gate-to-Source Voltage | $V_{GS}$ | $\pm 20$ | V |
| Continuous Drain Current $R_{\theta JA}$ (Note 1) | $I_D$ | 5.5 | A |
| $T_A=70^{\circ}C$ | 4.4 |  |  |
| Power Dissipation $R_{\theta JA}$ (Note 1) | $P_D$ | 1.14 | W |
| Continuous Drain Current $R_{\theta JA}$ (Note 2) | $I_D$ | 4.5 | A |
| $T_A=70^{\circ}C$ | 3.5 |  |  |
| Power Dissipation $R_{\theta JA}$ (Note 2) | $P_D$ | 0.68 | W |
| Continuous Drain Current $R_{\theta JA}$ t<10s (Note 1) | $I_D$ | 7.5 | A |
| $T_A=70^{\circ}C$ | 6.0 |  |  |
| Power Dissipation $R_{\theta JA}$ t<10s (Note 1) | $P_D$ | 1.95 | W |
| Pulsed Drain Current | $I_{DM}$ | 30 | A |
| Operating Junction and Storage Temperature | $T_J,T_{STG}$ | -55 to+150 | $^{\circ}C$ |
| Source Current (Body Diode) | $I_S$ | 2.0 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 28 | mJ |
| Lead Temperature for Soldering Purposes (1/8" from case for 10s) | $T_L$ | 260 | $^{\circ}C$ |

### MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

| V(BR)DSS | RDS(on)Max | ID Max |
| --- | --- | --- |
| 30V | 24mΩ@10V | 7.5A |
| 36mΩ@4.5V |  |  |

## THERMAL RESISTANCE RATINGS

| Rating | Symbol | Max | Unit |
| --- | --- | --- | --- |
| Junction-to-Ambient- Steady State (Note 1) | RθJA | 110 | $^{\circ}C/W$ |
| Junction-to-Ambient-t≤10s (Note 1) | RθJA | 64 |  |
| Junction-to-FOOT (Drain) | RθJF | 40 |  |
| Junction-to-Ambient- Steady State (Note 2) | RθJA | 183.5 |  |

**Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.**

## ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

| Characteristic | Symbol | Test Condition | Min | Typ | Max | Unit |
| --- | --- | --- | --- | --- | --- | --- |
| OFF CHARACTERISTICS |  |  |  |  |  |  |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA |  | 30 |  |  | V |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/TJ |  |  |  | 18 |  | mV/℃ |
| Zero Gate Voltage Drain Current | IDSS | VGS=0V,VDS=24V | TJ=25℃ |  |  | 1.0 | μA |
| TJ=100℃ |  |  | 10 |  |  |  |
| Gate-to-Source Leakage Current | IGSS | VDS=0V,VGS=±20V |  |  |  | ±100 | nA |

## ON CHARACTERISTICS (Note 3)

| Gate Threshold Voltage | VGS(TH) | VGS=VDS,ID=250μA |  | 1.5 |  | 3.0 | V |
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ |  |  |  | 6.0 |  | mV/℃ |
| Drain-to-Source On Resistance | RDS(on) | VGS=10V, ID=6.9A |  | 16 | 24 | mΩ |
| VGS=4.5V, ID=5.0A |  | 26 | 36 |  |  |
| Forward Transconductance | gFS | VDS=1.5V，ID=6.9A |  |  | 15 |  | S |

## CHARGES, CAPACITANCES AND GATE RESISTANCE

| Input Capacitance | CISS | VGS=0V,f=1.0MHz,VDS=15V |  | 520 |  | pF |
| Output Capacitance | COSS |  | 140 |  |  |
| Reverse Transfer Capacitance | CRSS |  | 70 |  |  |
| Total Gate Charge | QG(TOT) | VGS=4.5V,VDS=15V,ID=6.9A |  | 4.8 |  | nC |
| Threshold Gate Charge | QG(TH) |  | 1.1 |  |  |
| Gate-to-Source Charge | QGS |  | 2.1 |  |  |
| Gate-to-Drain Charge | QGD |  | 1.9 |  |  |
| Total Gate Charge | QG(TOT) | VGS=10V,VDS=15V,ID=6.9A |  | 9.5 |  | nC |

## DRAIN−TO−SOURCE CHARACTERISTICS

| Forward Diode Voltage | VSD | VGS=0VID=2.0A | TJ=25℃ |  | 0.76 | 1.0 | V |
| TJ=125℃ |  | 0.58 |  | ns |  |  |  |
| Reverse Recovery Time | tRR | VGS=0V,dIS/dt=100A/μs,IS=2.0A |  |  | 12.5 |  |  |
| Charge Time | Ta |  | 7.3 |  |  |  |
| Discharge Time | Tb |  | 5.2 |  |  |  |
| Reverse Recovery Time | QRR |  |  | 6.0 |  | nC |

## Source Inductance

| LS | TA=25℃ |  | 0.66 |  | nH |
| --- | --- | --- | --- | --- | --- | --- |
| Drain Inductance | LD |  | 0.20 |  | nH |  |
| Gate Inductance | LG |  | 1.50 |  | nH |  |
| Gate Resistance | RG |  | 2.0 | 3.0 | $\Omega$ |  |

## SOLDERING FOOTPRINT

| DIM | MILLIMETERS |  | INCHES |  |
| --- | --- | --- | --- | --- |
| MIN | MAX | MIN | MAX |  |
| A | 4.80 | 5.00 | 0.189 | 0.197 |
| B | 3.80 | 4.00 | 0.150 | 0.157 |
| C | 1.35 | 1.75 | 0.053 | 0.069 |
| D | 0.33 | 0.51 | 0.013 | 0.020 |
| G | 1.27 BSC |  | 0.050 BSC |  |
| H | 0.10 | 0.25 | 0.004 | 0.010 |
| J | 0.19 | 0.25 | 0.007 | 0.010 |
| K | 0.40 | 1.27 | 0.016 | 0.050 |
| M | 0° | 8° | 0° | 8° |
| N | 0.25 | 0.50 | 0.010 | 0.020 |
| S | 5.80 | 6.20 | 0.228 | 0.244 |